G. Weidner

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

Thomas Schroeder, P. Zaumseil, G. Weidner et al. · Journal of Applied Physics · 2006 · 42 citations

Materials Science, Materials Engineering, Incidence X-ray Diffraction +15

SiGe HBT module with 2.5 ps gate delay

A. Fox, B. Heinemann, R. Barth et al. · 2008 · 39 citations

Electrical Engineering, Sige Hbt Module, Engineering +13

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

A. Giussani, Peter Rodenbach, P. Zaumseil et al. · Journal of Applied Physics · 2009 · 39 citations

Engineering, Oxide Template, Chemistry +17

The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

Christian Wenger, Mindaugas Lukosius, G. Weidner et al. · Thin Solid Films · 2009 · 33 citations

Materials Science, Electrical Engineering, Engineering +7

SiGe BiCMOS Technology with 3.0 ps Gate Delay

H. Rücker, O. Fursenko, T. Grabolla et al. · 2007 · 24 citations

Electrical Engineering, Engineering, Vlsi Design +13