A. Touboul

Backside laser testing of ICs for SET sensitivity evaluation

D. Lewis, V. Pouget, F. Beaudoin et al. · IEEE Transactions on Nuclear Science · 2001 · 84 citations

Electrical Engineering, Engineering, Calibration +12

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Aditya Kalavagunta, A. Touboul, L. Shen et al. · IEEE Transactions on Nuclear Science · 2008 · 70 citations

Materials Engineering, Electrostatic Mechanisms Responsible, Electrical Engineering +14

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Mustapha Faqir, G. Verzellesi, F. Fantini et al. · Microelectronics Reliability · 2007 · 35 citations · Full text

Electrical Engineering, Engineering, Aluminum Gallium Nitride +3

Kink effect in HEMT structures: A trap-related semi-quantitative model and an empirical approach for spice simulation

Thomas Zimmer, D. Ouro Bodi, Jean-Michel Dumas et al. · Solid-State Electronics · 1992 · 28 citations

Engineering, Spice Simulation, Physics +13

Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors

D. Sodini, A. Touboul, G. Lecoy et al. · Electronics Letters · 1976 · 28 citations

Generation-recombination Noise, Electrical Engineering, Gaas M.e.s +10