Yuncong Cai

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu, Hong Zhou, Qian Feng et al. · IEEE Electron Device Letters · 2018 · 166 citations

More Than 3, Electrical Engineering, Engineering +7

Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm²

Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters · 2020 · 132 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm²

Chenlu Wang, Hehe Gong, Weina Lei et al. · IEEE Electron Device Letters · 2021 · 130 citations

Semiconductors, Low-power Electronics, Electrical Engineering +15

Lateral $\beta$ -Ga₂O₃ Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Zhuangzhuang Hu, Hong Zhou, Kui Dang et al. · IEEE Journal of the Electron Devices Society · 2018 · 63 citations · Full text

Materials Science, Power Rectifying, Electrical Engineering +13

Design and fabrication of field-plated normally off <b> <i>β</i> </b>-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application

Zhaoqing Feng, Yuncong Cai, Zhe Li et al. · Applied Physics Letters · 2020 · 60 citations

Wide-bandgap Semiconductor, Engineering, Lateral Ga2o3 Mosfet +16