Nolan S. Hendricks

Statistics

Publications

Citations

606

H-Index

Active since

2017

Affiliations

United States Air Force Research Laboratory(Current)

U.S. Air Force Research Laboratory Sensors Directorate

University of California, Santa Barbara

Cornell University

Wyle (United States)

Nolan S. Hendricks is an author at United States Air Force Research Laboratory specializing in semiconductor devices, engineering, and electrical engineering.

ORCID

Publications per year

2017–2024

Publications

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Andrew J. Green et al. · IEEE Electron Device Letters · 2017 · 259 citations

Engineering, Electrical Engineering, Materials Engineering +17

Lateral β-Ga2O3 field effect transistors

Kelson D. Chabak, Kevin Leedy, Andrew J. Green et al. · Semiconductor Science and Technology · 2019 · 121 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

Kyle J. Liddy, Andrew J. Green, Nolan S. Hendricks et al. · Applied Physics Express · 2019 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Esmat Farzana, Saurav Roy, Nolan S. Hendricks et al. · Applied Physics Letters · 2023 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes

Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks et al. · APL Materials · 2022 · 33 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

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