Paul Potyraj

Field-enhanced emission and capture in polysilicon pn junctions

David W. Greve, Paul Potyraj, Amador M. Guzmán · Solid-State Electronics · 1985 · 46 citations

Engineering, Electrical Engineering, Materials Science +12

A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit

Victor Veliadis, Megan Snook, Ty McNutt et al. · IEEE Electron Device Letters · 2008 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area

Victor Veliadis, Ty McNutt, Megan Snook et al. · IEEE Electron Device Letters · 2008 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

A 230-Watt S-band SiGe heterojunction bipolar transistor

Paul Potyraj, K.J. Petrosky, Karl D. Hobart et al. · IEEE Transactions on Microwave Theory and Techniques · 1996 · 35 citations

Engineering, Electrical Engineering, Microelectronics +16

Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors

Paul Potyraj, D.-L. Chen, Miltiadis K. Hatalis et al. · IEEE Transactions on Electron Devices · 1988 · 24 citations

Engineering, Electrical Engineering, Materials Science +17