Megan Snook - Concepedia

Author

Megan Snook

Northrop Grumman (United States)

Also Known As

M Snook, M. Snook, M. W. G. Snook, M. W. Snook, M.W.G. Snook, Megan Snook

Publications

506

Citations

H-Index

Concepts

All Affiliations

Northrop Grumman (United States)DEVCOM Army Research Laboratory Northrop Grumman (Germany)United States Naval Research Laboratory

About

Megan Snook is an author at Northrop Grumman (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	410
2	Electrical Engineering	11	11	410
3	Applied Physics	10	10	388
4	Physics	3	3	190
5	Materials Engineering	1	1	12

Megan Snook

Publications

420

Citations

H-Index

Page 1

	Year	Citations
A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation Nabil El-Hinnawy, Pavel Borodulin, B. Wagner, IEEE Electron Device Letters SemiconductorsThermal ActuationElectrical EngineeringElectronic DevicesEngineering	2013	122
The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching Robert S. Howell, Eric J. Stewart, R.G. Freitag, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2014	53
A 2055-V (at 0.7 $\hbox{mA/cm}^{2}$) 24-A (at 706 $\hbox{W/cm}^{2}$) Normally On 4H-SiC JFET With 6.8- $\hbox{mm}^{2}$ Active Area and Blocking-Voltage Capability Reaching the Material Limit Victor Veliadis, Megan Snook, Ty McNutt, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2008	43
A 1680-V (at 1 $\hbox{mA/cm}^{2}$) 54-A (at 780 $\hbox{W/cm}^{2}$) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area Victor Veliadis, Ty McNutt, Megan Snook, IEEE Electron Device Letters Semiconductor TechnologyTransistor Current GainElectrical EngineeringEngineeringPhysics	2008	40
Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET) Robert S. Howell, Eric J. Stewart, R.G. Freitag, Wide-bandgap SemiconductorElectrical EngineeringGhz SpdtEngineeringRf Semiconductor	2014	28
Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress Victor Veliadis, Harold Hearne, Eric J. Stewart, IEEE Electron Device Letters EngineeringBpd-induced Sf-related DegradationPower ElectronicsSemiconductor DeviceSf Formation	2012	28
A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation Victor Veliadis, Eric J. Stewart, Harold Hearne, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringPower DeviceElectronic Engineering	2010	28
Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications Victor Veliadis, Harold Hearne, Eric J. Stewart, IEEE Electron Device Letters Electrical EngineeringSource Mesa WidthEngineeringSemiconductor DeviceHigh Voltage Engineering	2009	22
Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications Robert S. Howell, Eric J. Stewart, R.G. Freitag, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2016	21
VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications Victor Veliadis, Harold Hearne, Ty McNutt, Materials science forum Electrical EngineeringSemiconductor DeviceEngineeringHigh Voltage EngineeringPower Device	2009	13

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