Koji Eriguchi

Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices

Koji Eriguchi, Kouichi Ono · Journal of Physics D Applied Physics · 2008 · 127 citations

Engineering, Silicon On Insulator, Plasma Processing +18

True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

Zhiqiang Wei, Y. Katoh, Shin Ogasahara et al. · 2016 · 77 citations

Electrical Engineering, Engineering, Vlsi Design +11

Defect generation in electronic devices under plasma exposure: Plasma-induced damage

Koji Eriguchi · Japanese Journal of Applied Physics · 2017 · 63 citations

Defect Tolerance, Electrical Engineering, Defect Generation +13

Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring

Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa et al. · Japanese Journal of Applied Physics · 2010 · 58 citations

Optical Materials, Engineering, Si Surface Damage +18

Plasma chemical behaviour of reactants and reaction products during inductively coupled CF₄plasma etching of SiO₂

Hiroshi Fukumoto, Isao Fujikake, Yoshinori Takao et al. · Plasma Sources Science and Technology · 2009 · 53 citations

Plasma Chemical Behaviour, Engineering, Plasma Physics +17