Yoshinori Nakakubo

Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring

Yoshinori Nakakubo, Asahiko Matsuda, Masanaga Fukasawa et al. · Japanese Journal of Applied Physics · 2010 · 58 citations

Optical Materials, Engineering, Si Surface Damage +18

Effects of Plasma-Induced Si Recess Structure on n-MOSFET Performance Degradation

Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo et al. · IEEE Electron Device Letters · 2009 · 52 citations

Engineering, N-mosfet Performance Degradation, Plasma Science +16

Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates

Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda et al. · Japanese Journal of Applied Physics · 2010 · 51 citations

Electrical Engineering, Engineering, Bias Frequency Effect +15

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao et al. · Thin Solid Films · 2009 · 51 citations

Electrical Engineering, Ion Implantation, Engineering +11

Structural and electrical characterization of HBr/O2 plasma damage to Si substrate

Masanaga Fukasawa, Yoshinori Nakakubo, Asahiko Matsuda et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2011 · 47 citations · Full text

Si Substrate, Engineering, Silicon On Insulator +18