Masanaga Fukasawa

Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process

Saburo Uchida, Seigo Takashima, Masaru Hori et al. · Journal of Applied Physics · 2008 · 141 citations

Natural Sciences, Materials Engineering, Materials Science +16

Reducing Damage to Si Substrates during Gate Etching Processes

Tomokazu Ohchi, Shöji Kobayashi, Masanaga Fukasawa et al. · Japanese Journal of Applied Physics · 2008 · 120 citations

Natural Sciences, Materials Science, Physics +17

Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas

Li Xi, Ling Li, Xuefeng Hua et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2002 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +15

Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions

Tomoko Ito, Kazuhiro Karahashi, Masanaga Fukasawa et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2011 · 70 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

E. Leobandung, H. Nayakama, D. Mocuta et al. · 2005 · 65 citations

Engineering, Computer Engineering, Electrical Engineering +17