J.B. Bernstein

Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation

Xiaojun Li, Jin Qin, J.B. Bernstein · IEEE Transactions on Device and Materials Reliability · 2008 · 171 citations

Engineering, Electrical Engineering, Electronic Materials +16

Electronic circuit reliability modeling

J.B. Bernstein, Moshe Gurfinkel, Xiaojun Li et al. · Microelectronics Reliability · 2006 · 168 citations

Engineering, Computer Engineering, Electrical Engineering +12

Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

Moshe Gurfinkel, Hao Xiong, Kin P. Cheung et al. · IEEE Transactions on Electron Devices · 2008 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

Physics-based numerical modeling and characterization of <i>6H</i>-silicon-carbide metal–oxide–semiconductor field-effect transistors

Stephen K. Powell, Neil Goldsman, J.M. McGarrity et al. · Journal of Applied Physics · 2002 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Dawei Heh, Chadwin D. Young, P. Y. Hung et al. · Applied Physics Letters · 2006 · 76 citations

Engineering, Electrical Engineering, Materials Science +17