Uihui Kwon

A practical Si nanowire technology with nanowire-on-insulator structure for beyond 10nm logic technologies

Sung-Gi Hur, Jung-Gil Yang, Sang-Su Kim et al. · 2013 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Novel stress-memorization-technology (SMT) for high electron mobility enhancement of gate last high-k/metal gate devices

Kwan-Yong Lim, Hyun‐Jung Lee, Choongryul Ryu et al. · 2010 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based nMOSFET Design for Low Standby Power Applications

Krishna K. Bhuwalka, Zhenhua Wu, Hyeon-Kyun Noh et al. · IEEE Transactions on Electron Devices · 2015 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond

Dong-il Bae, Geum-Jong Bae, Krishna K. Bhuwalka et al. · 2016 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

Investigation of HCI reliability in interdigitated LDMOS

Kyuheon Cho, Seonghoon Ko, Fumie Machida et al. · 2015 · 14 citations

Engineering, Materials Science, Interface Science +15