Hyeon-Kyun Noh - Concepedia

Author

Hyeon-Kyun Noh

Korea Advanced Institute of Science and Technology

Also Known As

H. K. Noh, Hyeon-Kyun Noh, Hyoun-Woo Noh

Publications

528

Citations

H-Index

Concepts

All Affiliations

Korea Advanced Institute of Science and Technology Samsung (South Korea)

About

Hyeon-Kyun Noh is an author at Korea Advanced Institute of Science and Technology specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	5	5	477
2	Engineering	4	4	457
3	Electrical Engineering	3	3	137
4	Materials Science	2	2	398
5	Computer Engineering	1	1	30

Hyeon-Kyun Noh

Publications

477

Citations

H-Index

Page 1

	Year	Citations
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Hyeon-Kyun Noh, K. J. Chang, Byungki Ryu, Physical Review B EngineeringOxygen-vacancy DefectsElectronic PropertiesSemiconductorsIi-vi Semiconductor	2011	320
Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors Hyeon-Kyun Noh, Ji‐Sang Park, K. J. Chang Journal of Applied Physics Nbis InstabilityEngineeringAmorphous In-ga-zn-o Thin-film-transistorsOptoelectronic DevicesSemiconductor Device	2013	78
In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based nMOSFET Design for Low Standby Power Applications Krishna K. Bhuwalka, Zhenhua Wu, Hyeon-Kyun Noh, IEEE Transactions on Electron Devices Low-power ElectronicsSemiconductorsElectrical EngineeringDevice ModelingEngineering	2015	30
The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors Young Jun Oh, Hyeon-Kyun Noh, K. J. Chang Science and Technology of Advanced Materials Oxygen VacanciesEngineeringCharge TransportSemiconductor DeviceNanoelectronics	2015	29
Ab initio study of boron segregation and deactivation at Si/SiO2 interface Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Microelectronic Engineering PhysicsOxide ElectronicsApplied PhysicsAb Initio StudySemiconductor Material	2011	20

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