Hyeon-Kyun Noh

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Hyeon-Kyun Noh, K. J. Chang, Byungki Ryu et al. · Physical Review B · 2011 · 320 citations

Engineering, Oxygen-vacancy Defects, Electronic Properties +18

Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors

Hyeon-Kyun Noh, Ji‐Sang Park, K. J. Chang · Journal of Applied Physics · 2013 · 78 citations

Nbis Instability, Engineering, Amorphous In-ga-zn-o Thin-film-transistors +18

In<sub>0.53</sub>Ga<sub>0.47</sub>As-Based nMOSFET Design for Low Standby Power Applications

Krishna K. Bhuwalka, Zhenhua Wu, Hyeon-Kyun Noh et al. · IEEE Transactions on Electron Devices · 2015 · 30 citations

Low-power Electronics, Semiconductors, Electrical Engineering +13

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Young Jun Oh, Hyeon-Kyun Noh, K. J. Chang · Science and Technology of Advanced Materials · 2015 · 29 citations · Full text

Oxygen Vacancies, Engineering, Charge Transport +20

Ab initio study of boron segregation and deactivation at Si/SiO2 interface

Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh et al. · Microelectronic Engineering · 2011 · 20 citations

Physics, Oxide Electronics, Applied Physics +5