Jung-Bae Lee

8Gb 3D DDR3 DRAM using through-silicon-via technology

Uksong Kang, Hoeju Chung, Seongmoo Heo et al. · 2009 · 73 citations

Engineering, Computer Engineering, Electrical Engineering +17

22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme

Chi Sung Oh, Ki Chul Chun, Young-Yong Byun et al. · 2020 · 68 citations

Engineering, Computer Engineering, Computer Science +17

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme

Kyomin Sohn, Taesik Na, Indal Song et al. · IEEE Journal of Solid-State Circuits · 2012 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Ki Chul Chun, Yong Ki Kim, Yesin Ryu et al. · IEEE Journal of Solid-State Circuits · 2020 · 47 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

Jung‐Sik Kim, Chi Sung Oh, Hocheol Lee et al. · 2011 · 43 citations

Engineering, Computer Engineering, Low-power Design +15