Chi Sung Oh

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based Stacking

Jung‐Sik Kim, Chi Sung Oh, Hocheol Lee et al. · IEEE Journal of Solid-State Circuits · 2011 · 200 citations

Low-power Electronics, Dq Pins, Electrical Engineering +15

22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme

Chi Sung Oh, Ki Chul Chun, Young-Yong Byun et al. · 2020 · 66 citations

Artificial Intelligence, Electrical Engineering, Hbm2e Dram +13

A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution

Kyomin Sohn, Won-Joo Yun, Reum Oh et al. · IEEE Journal of Solid-State Circuits · 2016 · 60 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Ki Chul Chun, Yong Ki Kim, Yesin Ryu et al. · IEEE Journal of Solid-State Circuits · 2020 · 44 citations

Non-volatile Memory, Electrical Engineering, Power Mesh +14

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking

Jung‐Sik Kim, Chi Sung Oh, Hocheol Lee et al. · 2011 · 43 citations

Mobile Dram, Tsv-based Stacking, Electrical Engineering +13