Concepedia

I‐Jung Wang

IW

5

Publications

93

Citations

5

H-Index

2017

Active since

Affiliations

Industrial Technology Research Institute(Current)

National Taiwan University

I‐Jung Wang is an author at Industrial Technology Research Institute specializing in applied physics, spintronics, and magnetism.

Top concepts

MagnetismEngineeringSpintronicsApplied PhysicsMicroelectronicsElectrical EngineeringMagnetoresistive Random-access MemoryPhysicsMemory DevicesMagnetic Device

Publications per year

2017–2021

5

Publications

5

Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

S. Z. Rahaman, I‐Jung Wang, Tian-Yue Chen et al. · IEEE Electron Device Letters · 2018 · 39 citations

Non-volatile Memory, Engineering, Magnetic Resonance +20

Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

S. Z. Rahaman, I‐Jung Wang, Ding-Yeong Wang et al. · IEEE Journal of the Electron Devices Society · 2020 · 20 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +22

An 8kb spin-orbit-torque magnetic random-access memory

Guanlong Chen, I‐Jung Wang, Po-Shao Yeh et al. · 2021 · 12 citations

On the Hardware Implementation of MRAM Physically Unclonable Function

Yu-Sheng Chen, Ding-Yeong Wang, Yu-Chen Hsin et al. · IEEE Transactions on Electron Devices · 2017 · 11 citations

Non-volatile Memory, Engineering, Bit-pattern Randomization Procedures +20

Challenges toward Low-Power SOT-MRAM

Shy-Jay Lin, Yen‐Lin Huang, M. Y. Song et al. · 2021 · 11 citations

Rows per page

1–5 of 5