T. Schwartzmann - Concepedia

Author

T. Schwartzmann

STMicroelectronics (France)

Also Known As

Schwartzmann, Thierry, T. Schwartzmann, Thierry Schwartzmann

Publications

180

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (France)Laboratoire des Technologies de la Microélectronique STMicroelectronics (India)

About

T. Schwartzmann is an author at STMicroelectronics (France) specializing in microelectronics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	131
2	Electrical Engineering	8	8	131
3	Applied Physics	7	7	115
4	Computer Engineering	3	3	61
5	Physics	2	2	43

T. Schwartzmann

Publications

141

Citations

H-Index

Page 1

	Year	Citations
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS G. Avenier, T. Schwartzmann, P. Chevalier, Electrical EngineeringEngineeringVlsi DesignPhysicsSelf-aligned Vertical Hbt	2005	30
Electrical Behavior and Technology Optimization of Si/SiGeC HBTs on Thin-Film SOI G. Avenier, Sebastien Fregonese, P. Chevalier, IEEE Transactions on Electron Devices EngineeringSigec HbtIntegrated CircuitsSilicon On InsulatorInterconnect (Integrated Circuits)	2008	21
Is SOI CMOS A Promising Technology For SOCs In High Frequency Range ? C. Raynaud, Frédéric Gianesello, C. Tinella, ECS Meeting Abstracts System On ChipElectrical EngineeringAbstract AlgebraEngineeringVlsi Design	2006	16
100GHz SiGe:C HBTs using non selective base epitaxy B. Martinet, H. Baudry, O. Kermarrec, Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronics	2001	15
Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms P. Chevalier, David Lagarde, G. Avenier, High-performance BulkEngineeringVlsi DesignComputer ArchitectureIntegrated Circuits	2006	15
Band-to-band tunneling in vertically scaled SiGe:C HBTs David Lagarde, P. Chevalier, T. Schwartzmann, IEEE Electron Device Letters Electrical EngineeringEngineeringTunneling MicroscopyPhysicsNanoelectronics	2006	13
250-GHz self-aligned Si/SiGeC HBT featuring an all-implanted collector P. Chevalier, C. Raya, B. Geynet, Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting Electrical EngineeringEngineeringHigh-speed ElectronicsRf SemiconductorHigh-frequency Device	2006	11
Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs B. Barbalat, T. Schwartzmann, P. Chevalier, EngineeringDeep Trench IsolationSigec HbtsRf PerformancesSemiconductor Device	2005	10
A 12.7dBm IIP3, 1.34dB NF, 4.9GHz–5.9GHz 802.11a/n LNA in 0.13 µm PD-SOI CMOS with Body-Contacted transistor R. Paulin, Philippe Cathelin, Géraldine Bertrand,	2016	10

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