Low-cost self-aligned SiGeC HBT module for high-performance bulk and SOI RFCMOS platforms

Abstract

A low-cost SiGeC HBT module for bulk and SOI RFCMOS platforms is described. The device features an all-implanted collector and a novel fragmented emitter layout, and requires 4 masks only. Record performances are demonstrated, with cut-off frequencies f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> as large as 230/240GHz and 140/200GHz on bulk and thin SOI substrates respectively