Douglas W. Barlage - Concepedia

Author

Douglas W. Barlage

University of Alberta ORCID

Also Known As

D W Barlage, D. Barlage, D. W. Barlage, D.W. Barlage, Douglas Barlage, Douglas W. Barlage

Publications

977

Citations

H-Index

Concepts

All Affiliations

University of Alberta Intel (United States)University of Illinois Urbana-Champaign North Carolina State University National Institute for Nanotechnology

About

Douglas W. Barlage is an author at University of Alberta specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	24	722
2	Electrical Engineering	15	22	679
3	Applied Physics	14	21	658
4	Materials Science	10	11	200
5	Computer Engineering	1	1	110

Douglas W. Barlage

Publications

817

Citations

H-Index

Page 1

	Year	Citations
30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays R. Chau, J. Kavalieros, B. Roberds, Electrical EngineeringEngineeringVlsi DesignNanoelectronicsBias Temperature Instability	2002	110
A 50 nm depleted-substrate CMOS transistor (DST) R. Chau, J. Kavalieros, Barry M. Doyle, Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityMixed-signal Integrated Circuit	2002	101
Zinc oxide thin film transistors with Schottky source barriers Michael Alex, Manisha Gupta, Fatema Rezwana Chowdhury, Solid-State Electronics Electrical EngineeringEngineeringOxide ElectronicsApplied PhysicsThin Film Transistors	2012	64
Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuit Douglas W. Barlage, J.T. O'Keeffe, J. Kavalieros, IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringMos Transistor	2000	52
High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics Douglas W. Barlage, Reza Arghavani, G. Dewey, Pmos TransistorsElectrical EngineeringEngineeringHigh-frequency DeviceNanoelectronics	2002	46
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base D.A. Ahmari, M.T. Fresina, Q.J. Hartmann, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	1996	43
Schottky Barrier Thin Film Transistors Using Solution-Processed <i>n</i>-ZnO Ahmad Hossein Adl, Alex Ma, Manisha Gupta, ACS Applied Materials & Interfaces	2012	33
Enhanced photo-collection in single BiFeO3 nanowire due to carrier separation from radial surface field K. Prashanthi, Priyesh Dhandharia, N. Miriyala, Nano Energy Materials ScienceFunctional NanomaterialsMultiferroicsEngineeringNanomaterials	2015	31
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current Gem Shoute, Amir Afshar, Triratna Muneshwar, Nature Communications	2016	25
Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN Kyle M. Bothe, Peter A. von Hauff, Amir Afshar, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringChemical DepositionSemiconductor DeviceSemiconductors	2013	24

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