Eric Paton

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Jung-Suk Goo, Qian Xiang, Yuzuru Takamura et al. · IEEE Electron Device Letters · 2003 · 57 citations

Engineering, Electrical Engineering, Microelectronics +16

Band offset induced threshold variation in strained-Si nMOSFETs

Jung-Suk Goo, Qian Xiang, Yuzuru Takamura et al. · IEEE Electron Device Letters · 2003 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

A comparative study of dopant activation in boron, BF/sub 2/, arsenic, and phosphorus implanted silicon

Ali Mokhberi, Peter B. Griffin, J.D. Plummer et al. · IEEE Transactions on Electron Devices · 2002 · 47 citations

Engineering, Materials Engineering, Materials Science +17

A critical study of defect migration and ferroelectric fatigue in lead zirconate titanate thin film capacitors under extreme temperatures

Eric Paton, M. Brazier, Said Mansour et al. · Integrated ferroelectrics · 1997 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +17

High performance 25 nm FDSOI devices with extremely thin silicon channel

Zoran Krivokapić, W. Maszara, F. Arasnia et al. · 2004 · 14 citations

Engineering, Electrical Engineering, Materials Science +17