Martin von Haartman

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate

Martin von Haartman, B. Gunnar Malm, Mikael Östling · IEEE Transactions on Electron Devices · 2006 · 54 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

J. Seger, Per‐Erik Hellström, Jun Lü et al. · Applied Physics Letters · 2005 · 43 citations

Engineering, Lateral Encroachment, Silicon On Insulator +16

1/f noise in Si and si/sub 0.7/Ge/sub 0.3/ pMOSFETs

Martin von Haartman, A-C Lindgren, Per Hellström et al. · IEEE Transactions on Electron Devices · 2003 · 39 citations

Electrical Engineering, Sige Device, Engineering +12

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O₃ gate stack

Depei Wu, A.-C. Lindgren, Stefan Persson et al. · IEEE Electron Device Letters · 2003 · 30 citations

Semiconductor Technology, Ald Tin/al/sub 2/O/sub, Electrical Engineering +12

Random telegraph signal noise in SiGe heterojunction bipolar transistors

Martin von Haartman, M. Sanden, Mikael Östling et al. · Journal of Applied Physics · 2002 · 24 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15