Chieh-Fang Chen

Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory

Chieh-Fang Chen, A. G. Schrott, M. H. Lee et al. · 2009 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +13

A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts

Shih‐Hung Chen, Hang-Ting Lue, Yen-Hao Shih et al. · 2012 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +17

A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

Hang-Ting Lue, Tzu‐Hsuan Hsu, Chen-Jun Wu et al. · 2015 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +13

Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

Bipin Rajendran, M. Breitwisch, Ming-Hsiu Lee et al. · IEEE Electron Device Letters · 2009 · 24 citations

Natural Sciences, Computer Science, Cell Biophysics +10

A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability

Hang-Ting Lue, Pei-Ying Du, Wei-Chen Chen et al. · 2017 · 16 citations

Engineering, Computer Engineering, Computer Science +14