Yen-Hao Shih

Phase change materials and their application to random access memory technology

Simone Raoux, R. M. Shelby, Jean Jordan‐Sweet et al. · Microelectronic Engineering · 2008 · 152 citations

Materials Science, Materials Engineering, Non-volatile Memory +11

BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai et al. · 2006 · 134 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +13

Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage

Hang-Ting Lue, Pei-Ying Du, Chih‐Ping Chen et al. · 2012 · 59 citations

Non-volatile Memory, Engineering, Tunnel Oxide +16

Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D <sc>NAND</sc> Flash Memory Devices

Yi‐Hsuan Hsiao, Hang-Ting Lue, Wei-Chen Chen et al. · IEEE Transactions on Electron Devices · 2014 · 44 citations

Non-volatile Memory, Engineering, Vlsi Design +16

A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts

Shih‐Hung Chen, Hang-Ting Lue, Yen-Hao Shih et al. · 2012 · 39 citations

Engineering, Vlsi Design, Computer Architecture +16