F. Glowacki

First demonstration of strained SiGe nanowires TFETs with ION beyond 700µA/µm

A. Villalon, C. Le Royer, P. Nguyen et al. · 2014 · 35 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Dual-channel CMOS co-integration with Si NFET and strained-SiGe PFET in nanowire device architecture featuring sub-15nm gate length

P. Nguyen, Sylvain Barraud, C. Tabone et al. · 2014 · 28 citations

Semiconductor Technology, Csige Channel, Electrical Engineering +14

Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations

F. Glowacki, C. Le Royer, Y. Morand et al. · Solid-State Electronics · 2014 · 18 citations

Materials Science, Electrical Engineering, Engineering +8

<i>In</i> <i>situ</i> spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

A. Larré, A. Halimaoui, F. Glowacki et al. · Applied Physics Letters · 1994 · 18 citations

Materials Science, Surface Characterization, Optical Materials +14

Opportunities and challenges of nanowire-based CMOS technologies

Sylvain Barraud, M. Cassé, L. Gaben et al. · 2015 · 17 citations

Nanowire Transistors, Electrical Engineering, Engineering +14