N. Berliner

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 79 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

Impact of back bias on ultra-thin body and BOX (UTBB) devices

Q. Liu, F. Monsieur, Arvind Kumar et al. · 2011 · 45 citations

V Bb, Electrical Engineering, Biomedical Sensors +13

Sub-25nm FinFET with advanced fin formation and short channel effect engineering

Takashi Yamashita, V. Basker, T. Standaert et al. · Symposium on VLSI Technology · 2011 · 34 citations

Electrical Engineering, Advanced Fin Formation, Engineering +12

22 nm technology compatible fully functional 0.1 μm<sup>2</sup> 6T-SRAM cell

Bala S. Haran, A. Kumar, Lahir Shaik Adam et al. · 2008 · 32 citations

Functional 0.1, Nm Technology, Electrical Engineering +11

ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08µm 2 SRAM cell

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2011 · 19 citations

Low-power Electronics, Electrical Engineering, Gate Length +14