Hokyung Park

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, and <inline-formula> <tex-math notation="LaTeX">${G}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula> Measurements

Andrea Padovani, B. Kaczer, Milan Pešić et al. · IEEE Transactions on Electron Devices · 2019 · 44 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +16

Improved interface quality and charge-trapping characteristics of MOSFETs with high-/spl kappa/ gate dielectric

Hokyung Park, Md. Shahriar Rahman, Man Chang et al. · IEEE Electron Device Letters · 2005 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Charge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations

Andrea Padovani, Luca Larcher, V. Della Marca et al. · Journal of Applied Physics · 2011 · 25 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

Musarrat Hasan, Hokyung Park, Hyundoek Yang et al. · Applied Physics Letters · 2007 · 21 citations

Engineering, Materials Engineering, Materials Science +17

Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET

Minseok Jo, Hokyung Park, Man Chang et al. · Microelectronic Engineering · 2007 · 20 citations

Engineering, Electrical Engineering, Materials Science +12