Hyundoek Yang

Electromigration-induced failure of GaNmulti-quantum well light emitting diode

Hyunsoo Kim, Hyundoek Yang, Chul Huh et al. · Electronics Letters · 2000 · 43 citations

Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance

Hyundoek Yang, Yunik Son, Sangmoo Choi et al. · Japanese Journal of Applied Physics · 2005 · 36 citations

Materials Science, Device Modeling, Electrical Engineering +13

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Hyundoek Yang, Yunik Son, Sungkwon Baek et al. · Applied Physics Letters · 2005 · 34 citations

Engineering, Semiconductor Device, Semiconductor Nanostructures +17

Electrical and Structural Properties of Nanolaminate (Al₂O₃/ZrO₂/Al₂O₃) for Metal Oxide Semiconductor Gate Dielectric Applications

Sanghun Jeon, Hyundoek Yang, Dae-Gyu Park et al. · Japanese Journal of Applied Physics · 2002 · 23 citations

Engineering, Direct Tunneling, Semiconductor Nanostructures +17

Ultralow work function of scandium metal gate with tantalum nitride interface layer for n-channel metal oxide semiconductor application

Musarrat Hasan, Hokyung Park, Hyundoek Yang et al. · Applied Physics Letters · 2007 · 21 citations

Materials Science, Materials Engineering, Electrical Engineering +14