Yunik Son

Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

Hyunjun Sim, Hyejung Choi, Dongsoo Lee et al. · 2006 · 42 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Improved Conductance Method for Determining Interface Trap Density of Metal–Oxide–Semiconductor Device with High Series Resistance

Hyundoek Yang, Yunik Son, Sangmoo Choi et al. · Japanese Journal of Applied Physics · 2005 · 36 citations

Materials Science, Device Modeling, Electrical Engineering +13

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

Hyundoek Yang, Yunik Son, Sungkwon Baek et al. · Applied Physics Letters · 2005 · 34 citations

Engineering, Semiconductor Device, Semiconductor Nanostructures +17

Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F² cell

S.H. Lee, M.S. Kim, S.G. Kim et al. · 2010 · 27 citations

Gate-first high-k/metal gate DRAM technology for low power and high performance products

Minchul Sung, Se‐Aug Jang, Hyunjin Lee et al. · 2015 · 27 citations

Low-power Electronics, Low Power, Electrical Engineering +14