Se‐Aug Jang

Robust ternary metal gate electrodes for dual gate CMOS devices

Dae-Gyu Park, Tae-Ho Cha, Kwan-Yong Lim et al. · 2002 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology

Sung-Wook Park, Sung-Joo Hong, Jin Woong Kim et al. · 2006 · 47 citations

Engineering, Electrical Engineering, Microelectronics +13

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Tae-Ho Cha, Dae-Gyu Park, Tae-Kyun Kim et al. · Applied Physics Letters · 2002 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Electrical Conduction in Aluminum Nitride

Se‐Aug Jang, Gyeong Man Choi · Journal of the American Ceramic Society · 1993 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gate-first high-k/metal gate DRAM technology for low power and high performance products

Minchul Sung, Se‐Aug Jang, Hyunjin Lee et al. · 2015 · 27 citations

Engineering, Electrical Engineering, Materials Science +17