T. Wetteroth

Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry

Thomas E. Tiwald, John A. Woollam, Stefan Zollner et al. · Physical review. B, Condensed matter · 1999 · 163 citations

Optical Materials, Engineering, Spectroscopic Property +22

Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si

Stefan Zollner, J. G. Chen, E. Duda et al. · Journal of Applied Physics · 1999 · 93 citations

Engineering, Dielectric Functions, Silicon On Insulator +18

Effects of irradiation temperature and dose on exfoliation of H+-implanted silicon carbide

R. B. Gregory, T. Wetteroth, S. R. Wilson et al. · Applied Physics Letters · 1999 · 30 citations

Materials Science, Semiconductors, H+-implanted Silicon Carbide +14

Leakage current models of thin film silicon-on-insulator devices

H.C. Shin, Stella Q. Hong, T. Wetteroth et al. · Applied Physics Letters · 1998 · 16 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +14

Thin-film metrology of silicon-on-insulator materials

Stefan Zollner, T.-C. Lee, Kari Noehring et al. · Applied Physics Letters · 2000 · 14 citations

Engineering, Optical Testing, Thin Film Process Technology +22