I. P. Soshnikov

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

G. É. Cirlin, I. P. Soshnikov, N. V. Sibirev et al. · physica status solidi (RRL) - Rapid Research Letters · 2009 · 124 citations

Natural Sciences, Materials Science, Physics +17

Optical properties of InAs quantum dots in a Si matrix

R. Heitz, N. N. Ledentsov, D. Bimberg et al. · Applied Physics Letters · 1999 · 66 citations

Natural Sciences, Materials Science, Physics +13

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Applied Physics Letters · 1999 · 61 citations

Engineering, Materials Engineering, Materials Science +12

Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy

I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko et al. · Crystal Growth & Design · 2016 · 54 citations

Natural Sciences, Materials Science, Physics +17

Optical study of GaAs quantum dots embedded into AlGaAs nanowires

T V Chizhova, G. É. Cirlin, A. D. Bouravleuv et al. · Semiconductor Science and Technology · 2011 · 36 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17