G. É. Cirlin

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

G. É. Cirlin, A. A. Tonkikh, N. V. Sibirev et al. · Physical Review B · 2005 · 285 citations

Materials Science, Semiconductors, Vertical Growth Rate +13

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

G. É. Cirlin, Yu. B. Samsonenko, A. D. Bouravleuv et al. · Physical Review B · 2010 · 210 citations · Full text

Materials Science, Engineering, Physics +15

Semiconductor nanowhiskers: Synthesis, properties, and applications

G. É. Cirlin, V. M. Ustinov · Semiconductors · 2009 · 209 citations

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

N. V. Sibirev, G. É. Cirlin, Jean‐Christophe Harmand et al. · Physical Review E · 2006 · 186 citations

Materials Science, Theoretical Analysis, Chemical Engineering +15

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

N. V. Sibirev, G. É. Cirlin, Wanghua Chen et al. · Physical Review B · 2009 · 179 citations

Engineering, Growth Model, Mbe Growth +19