Yu. B. Samsonenko

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

G. É. Cirlin, A. A. Tonkikh, N. V. Sibirev et al. · Physical Review B · 2005 · 285 citations

Materials Science, Semiconductors, Vertical Growth Rate +13

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

G. É. Cirlin, Yu. B. Samsonenko, A. D. Bouravleuv et al. · Physical Review B · 2010 · 210 citations · Full text

Materials Science, Engineering, Physics +15

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

G. É. Cirlin, I. P. Soshnikov, N. V. Sibirev et al. · physica status solidi (RRL) - Rapid Research Letters · 2009 · 124 citations

Materials Science, Semiconductors, Nanoscale Science +15

Role of nonlinear effects in nanowire growth and crystal phase

N. V. Sibirev, G. É. Cirlin, A. D. Bouravleuv et al. · Physical Review B · 2009 · 97 citations

Engineering, Nanowire Growth, Crystal Growth Technology +17

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

G. É. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko et al. · Nanoscale Research Letters · 2009 · 57 citations · Full text