Yu. B. Samsonenko - Concepedia

Author

Yu. B. Samsonenko

Institute for Analytical Instrumentation ORCID

Also Known As

J.B. Samsonenko, Samsonenko, Y. B., Y B Samsonenko, Y. B. Samsonenko, YU. B. SAMSONENKO, YURII SAMSONENKO, Yu B Samsonenko, Yu B. Samsonenko, Yu. B. Samsonenko, Yu. V. Samsonenko

126

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Institute for Analytical Instrumentation Ioffe Institute Saint Petersburg Academic University Russian Academy of Sciences Physico-Technical Institute

About

Yu. B. Samsonenko is an author at Institute for Analytical Instrumentation specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	1K
2	Applied Physics	12	13	1K
3	Electrical Engineering	4	4	134
4	Natural Sciences	1	1	56
5	Chemistry	1	1	46

Yu. B. Samsonenko

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment G. É. Cirlin, A. A. Tonkikh, N. V. Sibirev, Physical Review B Materials ScienceSemiconductorsVertical Growth RateEngineeringPhysics	2005	285
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy G. É. Cirlin, Yu. B. Samsonenko, A. D. Bouravleuv, Physical Review B Materials ScienceEngineeringPhysicsPure Zincblende GaasNanotechnology	2010	210
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates G. É. Cirlin, I. P. Soshnikov, N. V. Sibirev, physica status solidi (RRL) - Rapid Research Letters Materials ScienceSemiconductorsNanoscale ScienceEpitaxial GrowthEngineering	2009	124
Role of nonlinear effects in nanowire growth and crystal phase N. V. Sibirev, G. É. Cirlin, A. D. Bouravleuv, Physical Review B EngineeringNanowire GrowthCrystal Growth TechnologySidewall DiffusionSemiconductor Nanostructures	2009	97
Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate G. É. Cirlin, A. D. Bouravleuv, Yu. B. Samsonenko, Nanoscale Research Letters	2009	57
On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature G. É. Cirlin, A. A. Tonkikh, Yu. B. Samsonenko, physica status solidi (b) Materials ScienceSemiconductorsEngineeringAu–gaas Alloy DropsNanomaterials	2004	56
Effect of growth kinetics on the structural and optical properties of quantum dot ensembles G. É. Cirlin, Yu. G. Musikhin, Yu. B. Samsonenko, Journal of Crystal Growth Materials ScienceOptical MaterialsEngineeringPhysicsOptical Properties	2004	56
The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy G. É. Cirlin, N. V. Sibirev, Yu. B. Samsonenko, Semiconductors	2005	55
Origin of Spontaneous Core–Shell AlGaAs Nanowires Grown by Molecular Beam Epitaxy I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, Crystal Growth & Design	2016	53
Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates Min Sun, Edward Leong, A. H. Chin, Nanotechnology Materials ScienceIi-vi SemiconductorElectrical EngineeringPhotoluminescenceEngineering	2010	46

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