A. A. Tonkikh

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

G. É. Cirlin, A. A. Tonkikh, N. V. Sibirev et al. · Physical Review B · 2005 · 285 citations

Materials Science, Semiconductors, Vertical Growth Rate +13

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications

A. A. Tonkikh, Elena Voloshina, P. Werner et al. · Scientific Reports · 2016 · 103 citations · Full text

Room-temperature light emission from a highly strained Si/Ge superlattice

N. D. Zakharov, V. G. Talalaev, P. Werner et al. · Applied Physics Letters · 2003 · 58 citations

Crystal Structure, Optical Materials, Engineering +17

On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature

G. É. Cirlin, A. A. Tonkikh, Yu. B. Samsonenko et al. · physica status solidi (b) · 2004 · 56 citations

Materials Science, Semiconductors, Engineering +15

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

G. É. Cirlin, N. V. Sibirev, Yu. B. Samsonenko et al. · Semiconductors · 2005 · 55 citations