Romualdo A. Ferreyra

Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects

Cemil Kayis, Romualdo A. Ferreyra, M. Wu et al. · Applied Physics Letters · 2011 · 22 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

n⁺⁺GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts

Romualdo A. Ferreyra, Asamira Suzuki, Tomohiro Kazumoto et al. · IEEE Electron Device Letters · 2017 · 19 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +11

Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

Congyong Zhu, M. Wu, Cemil Kayis et al. · Applied Physics Letters · 2012 · 18 citations

Electrical Engineering, Engineering, Channel Degradation +10

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

L. Ardaravičius, O. Kiprijanovič, J. Liberis et al. · Semiconductor Science and Technology · 2015 · 16 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +19

Selective area doping of GaN toward high-power applications

Romualdo A. Ferreyra, Bingjun Li, Sizhen Wang et al. · Journal of Physics D Applied Physics · 2023 · 13 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13