Beak-Hyung Cho

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · IEEE Journal of Solid-State Circuits · 2008 · 189 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho et al. · IEEE Journal of Solid-State Circuits · 2007 · 134 citations

Non-volatile Memory, Engineering, Memory Design +18

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Hoeju Chung, Byung‐Hoon Jeong, Byung-Jun Min et al. · 2011 · 83 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · 2007 · 79 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb

S.L. Cho, J.H. Yi, Y.H. Ha et al. · 2005 · 71 citations

Non-volatile Memory, Cell Structure, Engineering +21