Sangbeom Kang

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · IEEE Journal of Solid-State Circuits · 2008 · 189 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho et al. · IEEE Journal of Solid-State Circuits · 2007 · 134 citations

Non-volatile Memory, Engineering, Memory Design +18

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang‐Jin Lee, Beak-Hyung Cho, Wooyeong Cho et al. · 2007 · 79 citations

Non-volatile Memory, Electrical Engineering, Engineering +9

Three-Dimensional Integration Approach to High-Density Memory Devices

Hojung Kim, Sanghun Jeon, Myoung‐Jae Lee et al. · IEEE Transactions on Electron Devices · 2011 · 19 citations

Oxide Tfts, Non-volatile Memory, Engineering +17

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

Sangbeom Kang, WooYeong Cho, Beak-Hyung Cho et al. · 2006 · 14 citations

Electrical Engineering, Engineering, Vlsi Design +11