2007 · 80 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignIntegrated Circuit DesignLow-power Digital Circuit DesignMemory DevicesMemory Hierarchy DesignMemory Subsystem DesignCharge Pump CircuitsCharge Pump DesignCmos ScalingLow-power Memory CircuitsLow-voltage Cmos DesignMemory Circuit DesignMemory CircuitsThroughput
A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.
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Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology