A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

Guofu Niu, John D. Cressler, S.J. Mathew, +1

IEEE Transactions on Electron Devices

Low-power ElectronicsElectrical EngineeringMobility ExtractionEngineeringVlsi Design +7

Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology

Guofu Niu, S.J. Mathew, John D. Cressler, +3

IEEE Transactions on Nuclear Science

Sti LeakageElectrical EngineeringSemiconductor DeviceEngineeringPhysics +9

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

S. Zhang, Guofu Niu, John D. Cressler, +5

IEEE Transactions on Nuclear Science

Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPhysics +11

A channel resistance derivative method for effective channel length extraction in LDD MOSFETs

Guofu Niu, John D. Cressler, S.J. Mathew, +1

IEEE Transactions on Electron Devices

Electrical EngineeringClear Graphic ImageEngineeringMixed-signal Integrated CircuitComputer Engineering +4

High–performance, low–power, and leakage–tolerance challenges for sub–70nm microprocessor circuits

Ram Krishnamurthy, Atila Alvandpour, S.J. Mathew, +3

European Solid-State Circuits Conference

Low-power ElectronicsHardware SecurityElectrical EngineeringEngineeringVlsi Design +13

Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire

S.J. Mathew, Guofu Niu, W.B. Dubbelday, +1

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringPhysicsNanoelectronicsSige Pfets +8

Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire

S.J. Mathew, Guofu Niu, W.B. Dubbelday, +7

Electrical EngineeringHole ConfinementEngineeringRf SemiconductorPhysics +9

Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs

Usha Gogineni, Guofu Niu, S.J. Mathew, +2

Reverse Eb StressElectrical EngineeringEngineeringRf SemiconductorPhysics +12

Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology

S.J. Mathew, W.E. Ansley, W.B. Dubbelday, +7

Electrical EngineeringSige CmosEngineeringRf SemiconductorPhysics +12

Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire

S.J. Mathew, Guofu Niu, W.B. Dubbelday, +7

IEEE Electron Device Letters

Electrical EngineeringHole ConfinementEngineeringRf SemiconductorPhysics +11