Concepedia

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

S. Zhang, Guofu Niu, John D. Cressler, S.J. Mathew, Usha Gogineni, S.D. Clark, P.J. Zampardi, R.L. Pierson

IEEE Transactions on Nuclear Science · 2000 · 30 citations · 20 references

DOI

Concepts

Abstract

A comparison of the effects of gamma irradiation on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and gallium-arsenide (GaAs) HBT technologies is reported, DC and radiofrequency (RF) performance as well as the low frequency noise are investigated for gamma doses up to 1 Mrad(Si). The results indicate that both SiGe and GaAs HBT technologies are tolerant to gamma irradiation.

References

20

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