Usha Gogineni

Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

Guofu Niu, John D. Cressler, S. Zhang et al. · IEEE Transactions on Electron Devices · 1999 · 56 citations

Electrical Engineering, Engineering, Physics +12

Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

Usha Gogineni, John D. Cressler, Guofu Niu et al. · IEEE Transactions on Electron Devices · 2000 · 51 citations

Electrical Engineering, Reverse Emitter-base Stress, Engineering +15

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

S. Zhang, Guofu Niu, John D. Cressler et al. · IEEE Transactions on Nuclear Science · 2000 · 30 citations

Electrical Engineering, Semiconductor Device, Engineering +13

RF power potential of 45 nm CMOS technology

Usha Gogineni, Jesús A. del Alamo, Christopher Putnam · 2010 · 29 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Usha Gogineni, Hongmei Li, Jesús A. del Alamo et al. · IEEE Journal of Solid-State Circuits · 2010 · 18 citations

Engineering, Substrate Contact Shape, Interconnect (Integrated Circuits) +17