D. Lacey

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 143 citations

Electrical Engineering, Engineering, Strained Si Devices +11

Understanding mobility mechanisms in extremely scaled HfO<inf>2</inf> (EOT 0.42 nm) using remote interfacial layer scavenging technique and V<inf>t</inf>-tuning dipoles with gate-first process

Takashi Ando, Martin M. Frank, Kwang‐Il Choi et al. · 2009 · 71 citations

Engineering, Remote Interfacial Layer, Semiconductor Device +16

Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond

T. C. Chen, G. Shahidi, Supratik Guha et al. · 2006 · 65 citations

Iiib Elements, Wide-bandgap Semiconductor, Engineering +18

A compact multichannel transceiver module using planar-processed optical waveguides and flip-chip optoelectronic components

K.P. Jackson, E.B. Flint, M.F. Cina et al. · 2003 · 50 citations

Optical Materials, Optical Technologies, Engineering +25

Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO/sub 2//metal stacks

Vijay Narayanan, K. Maitra, B.P. Linder et al. · IEEE Electron Device Letters · 2006 · 46 citations

Oxide Heterostructures, High Mobility Values, Electrical Engineering +15