Xinchuang Zhang

Channel Properties of Ga₂O₃-on-SiC MOSFETs

Yibo Wang, Wenhui Xu, Genquan Han et al. · IEEE Transactions on Electron Devices · 2021 · 42 citations

Engineering, Electrical Engineering, Materials Science +15

High V_TH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer

Mao Jia, Bin Hou, Ling Yang et al. · IEEE Electron Device Letters · 2023 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °C

Yibo Wang, Genquan Han, Wenhui Xu et al. · IEEE Transactions on Electron Devices · 2022 · 36 citations

Engineering, Electrical Engineering, Materials Science +16

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Mei Wu, Ke Cheng, Ling Yang et al. · Applied Physics Letters · 2022 · 23 citations

Engineering, Materials Engineering, Materials Science +17

930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma

Fuchun Jia, Xiaohua Ma, Ling Yang et al. · IEEE Electron Device Letters · 2022 · 23 citations

Engineering, Electrical Engineering, Physics +16