F.N. Cubaynes

Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

V. Subramanian, Bertrand Parvais, Jonathan Borremans et al. · IEEE Transactions on Electron Devices · 2006 · 150 citations

Device Modeling, Low-power Electronics, Electrical Engineering +10

RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

Jurriaan Schmitz, F.N. Cubaynes, R.J. Havens et al. · IEEE Electron Device Letters · 2003 · 69 citations

Device Modeling, Electrical Engineering, Mos Parameter Extraction +10

Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

V. Subramaniana, Bertrand Parvais, Jonathan Borremans et al. · 2006 · 60 citations

Low-power Electronics, Electrical Engineering, Planar Bulk Fets +15

Gate current: Modeling, ΔL extraction and impact on RF performance

R. van Langevelde, A.J. Scholten, Ray Duffy et al. · 2002 · 48 citations

Device Modeling, Hardware Security, Electrical Engineering +13

Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing

Paul K. Hurley, B. J. O’Sullivan, F.N. Cubaynes et al. · Journal of The Electrochemical Society · 2002 · 33 citations

Materials Science, Respective Orientations, Engineering +10