Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

V. Subramanian, Bertrand Parvais, Jonathan Borremans, +15

IEEE Transactions on Electron Devices

Device ModelingLow-power ElectronicsElectrical EngineeringEngineeringRf Semiconductor +8

RF capacitance-voltage characterization of MOSFETs with high leakage dielectrics

Jurriaan Schmitz, F.N. Cubaynes, R.J. Havens, +3

IEEE Electron Device Letters

Device ModelingElectrical EngineeringMos Parameter ExtractionEngineeringRf Capacitance-voltage Characterization +8

Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

V. Subramaniana, Bertrand Parvais, Jonathan Borremans, +14

Low-power ElectronicsElectrical EngineeringPlanar Bulk FetsEngineeringHigh-speed Electronics +13

Gate current: Modeling, ΔL extraction and impact on RF performance

R. van Langevelde, A.J. Scholten, Ray Duffy, +3

Device ModelingHardware SecurityElectrical EngineeringCircuit AnalysisEngineering +11

Examination of the Si(111)-SiO[sub 2], Si(110)-SiO[sub 2], and Si(100)-SiO[sub 2] Interfacial Properties Following Rapid Thermal Annealing

Paul K. Hurley, B. J. O’Sullivan, F.N. Cubaynes, +3

Journal of The Electrochemical Society

Materials ScienceRespective OrientationsEngineeringCrystalline DefectsSurface Science +8

Test Structure Design Considerations for RF-CV Measurements on Leaky Dielectrics

Jurriaan Schmitz, F.N. Cubaynes, R.J. Havens, +3

IEEE Transactions on Semiconductor Manufacturing

Device ModelingLeaky DielectricsElectrical EngineeringMos Parameter ExtractionEngineering +13

The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors

F.N. Cubaynes, P.A. Stolk, J. F. C. M. Verhoeven, +2

Materials Science in Semiconductor Processing

Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsPolysilicon Gate Morphology +6

Flat band voltage shift and oxide properties after rapid thermal annealing

Barry O’Sullivan, Paul K. Hurley, F.N. Cubaynes, +2

Microelectronics Reliability

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsBias Temperature Instability +7

Thickness and composition of ultrathin SiO2 layers on Si

C. van der Marel, Marcel A. Verheijen, Y. Tamminga, +3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceSemiconductorsSurface CharacterizationEngineeringCrystalline Defects +12

45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μ

K. Henson, R.J.P. Lander, M. Demand, +18

Pvd Tan GateElectrical EngineeringMetal GateEngineeringSemiconductor Device +9