Publication | Closed Access
Gate current: Modeling, ΔL extraction and impact on RF performance
48
Citations
3
References
2002
Year
Unknown Venue
Device ModelingHardware SecurityElectrical EngineeringCircuit AnalysisEngineeringRf SemiconductorStress-induced Leakage CurrentElectronic EngineeringBias Temperature InstabilityComputer EngineeringδL ExtractionModern Cmos TechnologiesMicroelectronicsParameter Extraction StraightforwardEffective LengthCircuit Simulation
In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.
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