Khiem Lam

22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation

Edward Van Brunt, Scott T. Allen, Albert A. Burk et al. · 2014 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

20 kV, 2 cm<sup>2</sup>, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant Agarwal, Craig Capell et al. · 2013 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra high voltage IGBTs in 4H-SiC

Sei‐Hyung Ryu, Craig Capell, Charlotte Jonas et al. · 2013 · 44 citations

Engineering, Electrical Engineering, Materials Science +14

Ultra high voltage MOS controlled 4H-SiC power switching devices

Sei‐Hyung Ryu, Craig Capell, Edward Van Brunt et al. · Semiconductor Science and Technology · 2015 · 43 citations

Engineering, Electrical Engineering, Power Electronics +16

15 kV, Large Area (1 cm<sup>2</sup>), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant Agarwal, Craig Capell et al. · Materials science forum · 2013 · 41 citations · Full text

Engineering, Electrical Engineering, Materials Science +17