Sofie Put

Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs

Sofie Put, Eddy Simoen, M. Jurczak et al. · IEEE Electron Device Letters · 2010 · 33 citations

Device Modeling, Electrical Engineering, Engineering +12

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

Sofie Put, Eddy Simoen, Nadine Collaert et al. · IEEE Transactions on Nuclear Science · 2007 · 32 citations

Device Modeling, Tensile Strain, Electrical Engineering +14

Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates

Daisuke Kobayashi, E. Simoen, Sofie Put et al. · IEEE Transactions on Nuclear Science · 2011 · 23 citations

Engineering, Nuclear Physics, Proton Irradiation Effects +20

Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

Alessio Griffoni, Simone Gerardin, Gaudenzio Meneghesso et al. · IEEE Transactions on Nuclear Science · 2008 · 21 citations

Electrical Engineering, Engineering, Physics +12

Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs

Wei Guo, B. Cretu, Jean‐Marc Routoure et al. · Solid-State Electronics · 2008 · 20 citations

Electrical Engineering, Engineering, Bias Temperature Instability +5