L. Daté

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

K. Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay et al. · 2013 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Weiming Guo, L. Daté, V. Peña et al. · Applied Physics Letters · 2014 · 45 citations

Engineering, Materials Engineering, Materials Science +14

Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation

C. Sandhya, Udayan Ganguly, Nihit Chattar et al. · IEEE Electron Device Letters · 2009 · 36 citations

Engineering, Materials Engineering, Materials Science +15

Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Hao Yu, Marc Schaekers, Andriy Hikavyy et al. · 2016 · 34 citations

Engineering, Electrical Engineering, Materials Science +14

Analysis of the N₂O dissociation in a RF discharge reactor

L. Daté, K. Radouane, Bernard Despax et al. · Journal of Physics D Applied Physics · 1999 · 33 citations

Engineering, Chemistry, Physics +17