Concepedia

E. Nebauer

EN

Statistics

Publications

13

Citations

313

H-Index

11

Active since

1968

Affiliations

Ferdinand-Braun-Institut(Current)

Fraunhofer Institute for Applied Solid State Physics

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

E. Nebauer is an author at Ferdinand-Braun-Institut specializing in materials science, electronic materials, and natural sciences.

Publications per year

1968–2001

13

Publications

13

Free-carrier plasma resonance effects and electron transport in reactively sputtered degenerate ZnO:Al films

S. Brehme, F. Fenske, W. Fuhs et al. · Thin Solid Films · 1999 · 97 citations

Natural Sciences, Materials Science, Physics +16

Reliability considerations of III-nitride microelectronic devices

Joachim Würfl, Vera Abrosimova, J. Hilsenbeck et al. · Microelectronics Reliability · 1999 · 29 citations

Engineering, Electrical Engineering, Materials Science +14

Aging behaviour of AlGaN/GaN HFETs withadvanced ohmic and Schottky contacts

J. Hilsenbeck, E. Nebauer, J. Würfl et al. · Electronics Letters · 2000 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C

J. Hilsenbeck, W. Rieger, E. Nebauer et al. · physica status solidi (a) · 1999 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts

Joachim Würfl, J. Hilsenbeck, E. Nebauer et al. · Microelectronics Reliability · 2000 · 20 citations

Engineering, Materials Engineering, Materials Science +14

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