S. Brehme - Concepedia

Author

S. Brehme

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute

Also Known As

S Brehme, S. Brehme, St. Brehme

Publications

711

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute Leipzig University Ferdinand-Braun-Institut German Orient Foundation

About

S. Brehme is an author at Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	13	20	598
2	Engineering	12	18	543
3	Electrical Engineering	3	3	133
4	Materials Engineering	3	3	144
5	Natural Sciences	2	2	27

S. Brehme

Publications

619

Citations

H-Index

Page 1

	Year	Citations
Free-carrier plasma resonance effects and electron transport in reactively sputtered degenerate ZnO:Al films S. Brehme, F. Fenske, W. Fuhs, Thin Solid Films Materials ScienceAluminium NitrideEngineeringPhysicsOxide Electronics	1999	97
Barrier-controlled carrier transport in microcrystalline semiconducting materials: Description within a unified model T. Weis, R. Lipperheide, U. Wille, Journal of Applied Physics EngineeringCharge TransportBarrier-controlled Carrier TransportSemiconductorsHall Mobilities	2002	92
Polycrystalline silicon thin films on glass by aluminum-induced crystallization Oliver Nast, S. Brehme, Dirk Holger Neuhaus, IEEE Transactions on Electron Devices Materials ScienceAluminum-induced CrystallizationElectrical EngineeringGlass-ceramicEngineering	1999	90
Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition J. Platen, B. Selle, I. Sieber, Thin Solid Films Epitaxial GrowthPhysicsApplied PhysicsSemiconductor Device FabricationMolecular Beam Epitaxy	2001	36
Hall effect and resistivity of β-FeSi2 thin films and single crystals S. Brehme, Philipp Lengsfeld, H. Lange, Journal of Applied Physics Materials ScienceSemiconductorsβ-Fesi2 Thin FilmsSingle CrystalsEngineering	1998	35
Electrical properties of Co-doped β -FeSi2 crystals S. Brehme, G. Behr, A. Heinrich Journal of Applied Physics Materials ScienceSemiconductorsElectrical Engineeringβ- Fesi 2Engineering	2001	32
Acceptor activation energies in epitaxial CuGaSe2 grown by MOVPE A. Gerhard, Wolfgang Harneit, S. Brehme, Thin Solid Films Materials EngineeringTransition Metal ChalcogenidesEngineeringCrystal Growth TechnologyApplied Physics	2001	30
Homo-epitaxial Si absorber layers grown by low-temperature ECRCVD B. Rau, I. Sieber, B. Selle, Thin Solid Films Applied PhysicsLow-temperature EcrcvdMolecular Beam EpitaxySilicon On InsulatorEpitaxial Growth	2004	28
Defects in CuGaSe 2 thin films grown by MOCVD A. Bauknecht, Susanne Siebentritt, A. Gerhard, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringSurface ScienceApplied Physics	2000	22
CuGaSe2 solar cells prepared by MOVPE Susanne Siebentritt, A. Bauknecht, A. Gerhard, Solar Energy Materials and Solar Cells Materials ScienceEngineeringEnergy ConversionBuilding-integrated PhotovoltaicsCugase2 Solar Cells	2001	21

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