W. Fuhs

On the mechanism of doping and defect formation in a-Si: H

K. Pierz, W. Fuhs, H. Mell · Philosophical Magazine B · 1991 · 115 citations

Materials Science, Semiconductor Technology, Thermal Equilibrium Picture +14

Aluminum-induced crystallization of amorphous silicon

S. Gall, M. Muske, I. Sieber et al. · Journal of Non-Crystalline Solids · 2002 · 113 citations

Materials Engineering, Materials Science, Aluminum-induced Crystallization +6

Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon

M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova et al. · Applied Physics Letters · 1995 · 104 citations

Electronic Devices, Crystalline Silicon A-si, Engineering +12

Electron microscopic characterization of reactively sputtered ZnO films with different Al-doping levels

I. Sieber, N. Wanderka, I. Urban et al. · Thin Solid Films · 1998 · 104 citations

Materials Science, Aluminium Nitride, Electron Microscopic Characterization +9

Excitation and temperature quenching of Er-induced luminescence in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si:H(Er)

W. Fuhs, Isabell Ulber, G. Weiser et al. · Physical review. B, Condensed matter · 1997 · 98 citations

Localized Excited State, Engineering, Luminescent Glass +16